International Journal of Engineering
Trends and Technology

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Volume 49 | Number 2 | Year 2017 | Article Id. IJETT-V49P244 | DOI : https://doi.org/10.14445/22315381/IJETT-V49P244

Band structure calculation of the semiconductors and their alloys by Tight Binding Model using SciLab


Pankaj Kumar, Ayush Kumar

Citation :

Pankaj Kumar, Ayush Kumar, "Band structure calculation of the semiconductors and their alloys by Tight Binding Model using SciLab," International Journal of Engineering Trends and Technology (IJETT), vol. 49, no. 2, pp. 287-294, 2017. Crossref, https://doi.org/10.14445/22315381/IJETT-V49P244

Abstract

The tight binding model is one of the strong theoretical techniques to calculate the band gap of the materials. The band structures of some semiconductors and the semiconductors made by their combination is calculated here using simulation technique. The basic theory of Tight Binding Model is presented since beginning to the final matrix formulation.

Keywords

Tight Binding Model(TBM), Aluminium Phosphide(AlP), Aluminium Arsenide(AlAs),Gallium Arsenide(GaAs) and Gallium Antimonide(GaSb).

References

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